Hi
I tried to solve the semiconductor diode example from the model library but simplifying it a bit. In particular, I discarded the rounded corner and just made it a text book like pn-junction. It seems I can solve the problem using electrostatics and diffusion for n- and p-type carriers. However, I dont trust the solution (hole concentration high at high potential).
It would be great if someone could have a brief look at my model and tell me if there is anything that's obviously wrong.
When solving, I get the message that Comsol failed to evaluate the variable Jacobian for the hole concentration. I guess that has something to do with large gradients being present which originate from the large changes in carrier concentrations.
Any help is much appreciated.
I tried to solve the semiconductor diode example from the model library but simplifying it a bit. In particular, I discarded the rounded corner and just made it a text book like pn-junction. It seems I can solve the problem using electrostatics and diffusion for n- and p-type carriers. However, I dont trust the solution (hole concentration high at high potential).
It would be great if someone could have a brief look at my model and tell me if there is anything that's obviously wrong.
When solving, I get the message that Comsol failed to evaluate the variable Jacobian for the hole concentration. I guess that has something to do with large gradients being present which originate from the large changes in carrier concentrations.
Any help is much appreciated.