I'm trying to figure out how to achieve photo-carrier generation in a direct band gap semiconductor in the COMSOL 4.4 semiconductor module. The only form of generation I see in the module is Impact Ionization which consists of various a,b,c, and d factors for electrons and holes. I need the equivalent of a photo-excitation signal to analyze the IV characteristics of a semiconductor. How can I model the generation of photo-carriers in the semiconductor module?
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