thermal stress on wafer bonding

Hi,
I am a student and i am new with COMSOL. Please help me some problem.
I want to simulate the thermal stress in the wafer bonding. The material I used : Indium phosphide on the top, Al2O3 intermediate and Silicon at the bottom. The heat flux i used : 10000000 W/m2. I applied the heat flux at the top surface, and the boundary temperature remains at the room temperature.

I try to simulatr thermal stress on them. It can run. But I think the result is not correct.
- There are much deformation and bend while the tempeture changes a little bit. But I see in some more papers. With this heat flux, it is a little bit deformation while the temperature changes so much.
- The stress seems so high. In my work, it is around 2MPa. But it is 300GPa here.

I must inform it with my professor soon but i dont know how to repair it.
Please help me.
Please find the attached file.

Thanks beforehand